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Study of p-layer on the hydrogenated amorphous silicon HIT solar cells
1 : Laboratoire de Physique des plasmas, Matériaux Conducteurs et leurs Applications. Université des sciences et de la technologie d'Oran.
U.S.T.O.M.B. B.P. 1505 , El M'nouar, Oran, Algérie. -
Algérie
In this article, we've studied the effect of p-layer doping density NA and surface band bending Esbb at the interface ITO/p-layer on the performance of heterojunction solar cell (ITO/p-a-Si:H/i-pm-Si:H/n-c-Si/Al). Despite the deterioration of p-layer material quality with doping density, the reduced bulk recombination was found to compensate for the increased loss in the p-layer. An increase of p-layer doping density NA and contact barrier height ϕb0 (Variation of the surface band bending Esbb) leads to an increase of the efficiency of HIT (heterojunction with intrinsic thin layer) solar cells.
